transisor (npn) features z high collector to base voltage v cbo z high collector to emitter voltage v ceo z large collector power dissipation p c z low collector to emitter saturation voltage v ce(sat) marking:1s maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 400 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 5 v i c collector current -continuous 100 ma p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 400 v collector-emitter breakdown voltage v (br)ceo i c =0.5ma, i b =0 400 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =400v, i e =0 50 a emitter cut-off current i ebo v eb =5v, i c =0 50 a dc current gain h fe v ce =5v, i c =30ma 30 collector-emitter saturation voltage v ce(sat) i c =50ma, i b =5ma 1.5 v base-emitter saturation voltage v be(sat) i c =50ma, i b =5ma 1.5 v transition frequency f t v ce =30v, i c =20ma, f=200mhz 40 mhz collector output capacitance c ob v cb = 30v, i e =0, f=1mhz 7 pf sot-89 1. base 2. collector 3. emitter 1 2 3 2SD2413 1 www.htsemi.com semiconductor jinyu
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